Temperature Dependence of Raman-Active Modes of TlIn(0.95Se0.05)2 Single Crystals

Authors

  • O. O. Gomonnai Uzhhorod National University, Vlokh Institute of Physical Optics
  • M. Ludemann Semiconductor Physics, Chemnitz University of Technology
  • A. V. Gomonnai Institute of Electron Physics, Ukr. Nat. Acad. Sci., Uzhhorod National University
  • I. Yu. Roman Institute of Electron Physics, Ukr. Nat. Acad. Sci.
  • A. G. Slivka Uzhhorod National University
  • D. R. T. Zahn Semiconductor Physics, Chemnitz University of Technology

DOI:

https://doi.org/10.15407/ujpe64.2.173

Keywords:

Raman scattering, layered crystal, phase transition

Abstract

The unpolarized Raman spectra of TlIn(S0.95Se0.05)2 single crystals in the frequency interval 16–340 cm−1 are studied in the temperature interval 30 ≤ T ≤ 293 K. The Raman spectra are analyzed by a multipeak simulation using Lorentzian contours. The temperature behavior of the vibrational band parameters (half-width, intensity, and frequency) is studied with the emphasis on the temperature range, where changes related to phase transformations are revealed.

References

K.R. Allakhverdiev, T.G. Mamedov, B. Akmoglu, S.S. Ellialtioglu. Phase transitions in ternary layered A3B3C62 group ferroelectric semiconductors. Tr. J. Phys. 18, 1 (1994).

A.M. Panich. Electronic properties and phase transitions in low-dimensional semiconductors (Topical Review). J. Phys.: Condens. Matter 28, 293202/1 (2008).

I. Martynyuk-Lototska, I. Trach, O. Kokhan, R. Vlokh. Efficient acousto-optic crystal, TlInS2: Acoustic and elastic anisotropy. Appl. Opt. 56, 3179 (2017). https://doi.org/10.1364/AO.56.003179

A. Say, I. Martynyuk-Lototska, D. Adamenko, A. Pogodin, O. Kokhan, R. Vlokh. Thermal expansion anisotropy of B-TlInS2 crystals in the course of phase transitions. Phase Transitions 91, 1 (2017). https://doi.org/10.1080/01411594.2017.1341983

K.R. Allakhverdiev, T.G. Mamedov, G.I. Peresada, E.G. Ponatovski, Ya.N. Sharifov. Phase diagrams of layered semiconductors TlInS2, TlGaS2, and TlGaSe2 under hydrostatic pressures up to 1.2 GPa. Sov. Phys. Solid State 27, 568 (1985).

O.O. Gomonnai, P.P. Guranich, M.Y. Rigan, I.Y. Roman, A.G. Slivka. Effect of hydrostatic pressure on phase transitions in ferroelectric TlInS2. High Press. Research. 28, 615 (2008). https://doi.org/10.1080/08957950802576431

O.O. Gomonnai, R.R. Rosul, P.P. Guranich, A.G. Slivka, I.Y. Roman, M.Y. Rigan. Optical properties of TlInS2 layered crystal under pressure. High Press. Research. 32, 39 (2012). https://doi.org/10.1080/08957959.2011.635144

P.P. Guranich, R.R. Rosul, O.O. Gomonnai, A.G. Slivka, I.Y. Roman, A.V. Gomonnai. Ferroelastisity of TlInS2 crystal. Solid State Commun. 184, 21 (2014). https://doi.org/10.1016/j.ssc.2013.12.034

A.U. Sheleg, V.G. Hurtavy, V.V. Shautsova, V.A. Aliev. X-ray diffraction study of the crystallographic characteristics of TlInSxSe2?x solid solutions. Crystall. Rep. 59, 186 (2014). https://doi.org/10.1134/S1063774514020229

N.M. Gasanly. Composition dependence of lattice parameters and band gap energies of tallium based layered mixed crystals. Indian J. Phys. 89, 657 (2015). https://doi.org/10.1007/s12648-014-0636-x

M.Yu. Seyidov, R.A. Suleymanov, F. Salehli. Origin of structural instability in TlInS2(1?x)Se2x solid solutions. Phys. Scripta 84, 015601 (2011). https://doi.org/10.1088/0031-8949/84/01/015601

A.U. Sheleg, V.G. Hurtavy, V.V. Shautsova, V.A. Aliev. Dielectric properties and phase transitions in crystals of TlInSxSe2?x solid solutions. Phys. Solid State 54, 622 (2012). https://doi.org/10.1134/S1063783412030298

R.R. Rosul, P.P. Guranich, O.O. Gomonnai, A.G. Slivka, M.Yu. Rigan, V.M. Rubish, O.G. Guranich, A.V. Gomonnai. Dielectric properties of TlIn(S1?xSex)2 polycrystals near phase transitions. Semicond. Phys., Quant. Electr. and Optoelectr. 15, 35 (2012).

N.A. Bakhyshov, N.M. Gasanly, B.M. Yavadov, V.I. Tagirov, Sh.M. Efendiev. Mixed one- and two-mode behaviour of optical phonons in TlGaS2xSe2(1?x) and TlInS2xSe2(1?x) layer solid solutions. Phys. Status Solidi B 91, K1 (1979). https://doi.org/10.1002/pssb.2220910145

A.V. Gomonnai, I. Petryshynets, Yu.M. Azhniuk, O.O. Gomonnai, I.Yu. Roman, I.I. Turok, A.M. Solomon, R.R. Rosul, D.R.T. Zahn. Growth and characterisation of sulphur-rich TlIn(S1?xSex)2 single crystals. J. Cryst. Growth 367, 35 (2013). https://doi.org/10.1016/j.jcrysgro.2013.01.008

I.Guler,N.M.Gasanly.Raman scattering inTlInS2xSe2(1?x) layered mixed crystals (0.25?x?1): Compositional dependence of the mode frequencies and line widths. Physica B: Condensed Matter 406, 3374 (2011). https://doi.org/10.1016/j.physb.2011.05.052

I. Guler, N.M. Gasanly. Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1?x) mixed crystals. Appl. Surf. Science 318, 113 (2014). https://doi.org/10.1016/j.apsusc.2014.01.131

O.O. Gomonnai, M. Ludemann, A.V. Gomonnai, I.Yu. Roman, A.G. Slivka, D.R.T. Zahn. Low-temperature Raman studies of sulfur-rich TlIn(S1?xSex)2 single crystals. Vibrational Spectroscopy 97, 114 (2018). https://doi.org/10.1016/j.vibspec.2018.05.007

N.M. Gasanly, B.N. Mavrin, K.E. Sterin, V.I. Tagirov, Z.D. Khalafov. Raman study of layer TlGaS2, B-TlInS2 and TlGaSe2 single crystals. Phys. Status Solidi B 86, K49 (1978). https://doi.org/10.1002/pssb.2220860162

W. Henkel, H.D. Hochheimer, C. Carlone, A. Werner, V. Ves, H.V. Schnering. High-pressure Raman study of the ternary chalcogenides TlGaS2, TlGaSe2, TlInS2, and TlInSe2. Phys. Rev. B 26, 3211 (1982). https://doi.org/10.1103/PhysRevB.26.3211

N.M. Gasanly, A.F. Goncharov, N.N. Melnik, A.S. Ragimov, V.I. Tagirov. Optical phonons and structure of TlGaS2, TlGaSe2, and TlInS2 layer single crystals. Phys. Status Solidi B 116, 427 (1983). https://doi.org/10.1002/pssb.2221160204

M. Isik, N.M. Gasanly, F. Korkmaz. Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals. Phys. B: Cond. Matter 421, 50 (2013). https://doi.org/10.1016/j.physb.2013.03.046

V.M. Burlakov, A.P. Ryabov, M.P. Yakheev, E.A. Vinogradov, N.N. Melnik, N.M. Gasanly. Raman spectroscopy of soft and rigid modes in ferroelectric TlInS2. Phys. Status Solidi B 153, 727 (1989). https://doi.org/10.1002/pssb.2221530232

K.R. Allakhverdiev, S.S. Babaev, M.M. Tagiev, M.M. Shirinov. Low temperature IR and Raman scaterring of TlInS2 layered crystal. Phys. Status Solidi B 152, 317 (1989). https://doi.org/10.1002/pssb.2221520135

N.S. Yuksek, N.M. Gasanly, A. Aydinli. Angarmonic line shift of the optical Raman modes in TlInS2 layered crystals. J. Raman Spectrosc. 35, 55 (2004). https://doi.org/10.1002/jrs.1083

R. Paucar, K. Harada, R. Matsumoto, K. Wakita, Y.G. Shim, O. Alekperov, N. Mamedov. Phase transition and Raman-active modes in TlInS2. Phys. Status Solidi C 10, 1132 (2013). https://doi.org/10.1002/pssc.201200868

R. Paucar, Y.G. Shim, K.Wakita, O. Alekperov, N. Mamedov. Temperature dependence of low-frequency optical phonons in TlInS2. Phys. Status Solidi C 12, 826 (2015). https://doi.org/10.1002/pssc.201400350

R. Paucar, Y.G. Shim, K.O. Mimura, K. Wakita, O. Alekperov, N. Mamedov. Temperature dependence of low-frequency polarized Raman scattering spectra in TlInS2. Phys. Status Solidi C 14, 1600214 (2017).

Sh. Nurov, V.M. Burlakov, E.A. Vinogradov, N.M. Gasanly, B.M. Dzhavadov. Vibrational spectra of TlInS2, TlIn0.95Ga0.05S2, TlIn(S0.8Se0.2)2 crystals in the vicinity of phase transitions. Phys. Status Solidi B 137, 21 (1986). https://doi.org/10.1002/pssb.2221370103

S.M. Cho, H.M. Jang. Softening and mode crossing of the lowest-frequency A1 (transverse-optical) phonon in single-crystal PbTiO3. Appl. Phys. Lett. 76, 314 (2000). https://doi.org/10.1063/1.126563

N.M. Gasanly, H. Ozkan, A. Aydinli, I. Yilmaz. Temperature dependence of the Raman active phonon frequencies in indium sulfide. Sol. State Commun. 110, 231 (1999). https://doi.org/10.1016/S0038-1098(99)00062-9

O.O. Gomonnai, O. Gordan, P.P. Guranich, A.G. Slivka, A.V. Gomonnai, D.R.T. Zahn. Temperature-dependent dielectric functions and interband critical points of sulfurrich TlIn(S1?xSex)2 layered solid solution crystals. Appl. Surf. Science 424, 383 (2017). https://doi.org/10.1016/j.apsusc.2017.01.228

UJP 2019 V64 #2

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Published

2019-02-21

How to Cite

Gomonnai, O. O., Ludemann, M., Gomonnai, A. V., Roman, I. Y., Slivka, A. G., & Zahn, D. R. T. (2019). Temperature Dependence of Raman-Active Modes of TlIn(0.95Se0.05)2 Single Crystals. Ukrainian Journal of Physics, 64(2), 173. https://doi.org/10.15407/ujpe64.2.173

Issue

Vol. 64 No. 2 (2019)

Section

Semiconductors and dielectrics

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