Temperature Dependence of Raman-Active Modes of TlIn(0.95Se0.05)2 Single Crystals

  • O. O. Gomonnai Uzhhorod National University, Vlokh Institute of Physical Optics
  • M. Ludemann Semiconductor Physics, Chemnitz University of Technology
  • A. V. Gomonnai Institute of Electron Physics, Ukr. Nat. Acad. Sci., Uzhhorod National University
  • I. Yu. Roman Institute of Electron Physics, Ukr. Nat. Acad. Sci.
  • A. G. Slivka Uzhhorod National University
  • D. R. T. Zahn Semiconductor Physics, Chemnitz University of Technology
Keywords: Raman scattering, layered crystal, phase transition


The unpolarized Raman spectra of TlIn(S0.95Se0.05)2 single crystals in the frequency interval 16–340 cm−1 are studied in the temperature interval 30 ≤ T ≤ 293 K. The Raman spectra are analyzed by a multipeak simulation using Lorentzian contours. The temperature behavior of the vibrational band parameters (half-width, intensity, and frequency) is studied with the emphasis on the temperature range, where changes related to phase transformations are revealed.


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How to Cite
Gomonnai, O., Ludemann, M., Gomonnai, A., Roman, I., Slivka, A., & Zahn, D. R. T. (2019). Temperature Dependence of Raman-Active Modes of TlIn(0.95Se0.05)2 Single Crystals. Ukrainian Journal of Physics, 64(2), 173. https://doi.org/10.15407/ujpe64.2.173
Semiconductors and dielectrics