Optoelectronic Properties of Hydrogenated Amorphous Silicon–Carbon and Nanocrystalline-Silicon Thin Films


  • B. A. Najafov Institute of Radiation Problems, Azerbaijan National Academy of Sciences
  • V. V. Dadashova Baku State University




films of a hydrogenated amorphous silicon–carbon alloy, films of nanocrystalline silicon, plasma-chemical technique, crystallites, efficiency of solar cells


Some parameters of thin films fabricated of hydrogenated amorphous silicon–carbon alloys a-Si1 xCx:H with x = 0 and 0.5 and nanocrystalline silicon (nc-Si) and serving as a basis for developing solar cells including a Schottky barrier and p–i–n and double p–i–n heterojunctions have been considered. In double p–i–n heterojunctions, a-SiC/a-Si/nc-Si, the p-layer was made from a-SiC:H and used as a “window”, and the n-layer was made from nc-Si. The current-voltage characteristics of solar cells of each type at their illumination are studied. The highest efficiency of 11.5% was found for solar cells with the double p–i–n heterojunctions in the case where a cell 1 cm2 in area was illuminated with light of a 100-mW/cm2 intensity.


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How to Cite

Najafov, B. A., & Dadashova, V. V. (2018). Optoelectronic Properties of Hydrogenated Amorphous Silicon–Carbon and Nanocrystalline-Silicon Thin Films. Ukrainian Journal of Physics, 58(10), 968. https://doi.org/10.15407/ujpe58.10.0968



Solid matter