Microstructure of thin Si–Sn Composite Films

  • V. B. Neimash Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • V. M. Poroshin Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • A. M. Kabaldin Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • V. O. Yukhymchuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • P. E. Shepelyavyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. A. Makara Taras Shevchenko National University of Kyiv, Faculty of Physics
  • S. Yu. Larkin Public Joint Stock Company “Research and Production Concern Nauka”
Keywords: Microstructure of thin composite films, Auger method, Raman spectroscopy

Abstract

Microstructure investigations of thin Si-Sn alloy films were carried out, by using Auger and Raman spectroscopies, X-ray fluorescence analysis, and electron microscopy. The films were produced by the thermal-vacuum coevaporation of Si and Sn. The properties of films with the Sn content ranging from 1 to 5 wt.% are studied. A significant influence of the tin impurity on the formation of a film surface microrelief and nanocrystals in the amorphous matrix is found. The size of quasispherical formations on the film surface can be of the order of 100 nm. The volume fraction of the silicon nanocrystalline phase in a film can reach 90%. The roles of fabrication conditions and growth rate on the distributions of Sn and technological impurities C and O over the film surface and across the film thickness are analyzed.

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Published
2018-10-11
How to Cite
Neimash, V., Poroshin, V., Kabaldin, A., Yukhymchuk, V., Shepelyavyi, P., Makara, V., & Larkin, S. (2018). Microstructure of thin Si–Sn Composite Films. Ukrainian Journal of Physics, 58(9), 865. https://doi.org/10.15407/ujpe58.09.0865
Section
Solid matter

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