Elastic Strains in SiGe Heterostructures with Non-Uniform Quantum Dots
DOI:
https://doi.org/10.15407/ujpe58.08.0780Keywords:
Stranski–Krastanov growth mode, Green’s functions, finite element method, wetting layer, stress tensor, elastic moduli tensor, rigid boundary conditions, node, Galerkin methodAbstract
Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the magnitude of elastic fields was studied. It is shown that quantum dots with a uniform component content are more strained in comparison with non-uniform nanoislands.
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