Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si

  • M. M. Kras’ko Institute of Physics, Nat. Acad. Sci. of Ukraine
Keywords: silicon, electron irradiation, tin-vacancy complex


The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effect is more pronounced in high-resistance samples, whereas the rates of electron removal from low-resistance ones are almost identical in both materials. This fact can be explained by the difference between the formation efficiency of main compensating radiation- induced defects in n-Si doped with Sn (SnV and VP complexes) and undoped n-Si (mainly, VP complexes), which depends of the concentration of phosphorus in the samples.


  1. M.M. Kras'ko, Ukr. Fiz. Zh. 57, 1162 (2012).

  2. A.N. Larsen, J.J. Goubet, P. Mejlholm, J.Sh. Christensen, M. Fanciulli, H.P. Gunnlaugsson, G. Weyer, J.W. Petersen, A. Resende, M. Kaukonen, R. Jones, S. Oberg, P.R. Briddon, B.G. Svensson, J.L. Lind- ¨ str¨om, and S. Dannefaer, Phys. Rev. B 62, 4535 (2000).

  3. J.J. Goubet, J.Sh. Christensen, P. Mejlholm, and A.N. Larsen, in Proceedings of the 2-nd ENDEASD Workshop, edited by C. Claeys (Kista-Stockholm, 2000), p. 137.

  4. M.L. David, E. Simoen, C. Claeys, V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin, and J.F. Barbot, J. Phys. Condens. Matter 17, S2255 (2005).

How to Cite
Kras’ko, M. (2018). Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si. Ukrainian Journal of Physics, 58(3), 243.
Solid matter