Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si
The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effect is more pronounced in high-resistance samples, whereas the rates of electron removal from low-resistance ones are almost identical in both materials. This fact can be explained by the difference between the formation efficiency of main compensating radiation- induced defects in n-Si doped with Sn (SnV and VP complexes) and undoped n-Si (mainly, VP complexes), which depends of the concentration of phosphorus in the samples.
- M.M. Kras'ko, Ukr. Fiz. Zh. 57, 1162 (2012).
- A.N. Larsen, J.J. Goubet, P. Mejlholm, J.Sh. Christensen, M. Fanciulli, H.P. Gunnlaugsson, G. Weyer, J.W. Petersen, A. Resende, M. Kaukonen, R. Jones, S. Oberg, P.R. Briddon, B.G. Svensson, J.L. Lind- ¨ str¨om, and S. Dannefaer, Phys. Rev. B 62, 4535 (2000).
- J.J. Goubet, J.Sh. Christensen, P. Mejlholm, and A.N. Larsen, in Proceedings of the 2-nd ENDEASD Workshop, edited by C. Claeys (Kista-Stockholm, 2000), p. 137.
- M.L. David, E. Simoen, C. Claeys, V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin, and J.F. Barbot, J. Phys. Condens. Matter 17, S2255 (2005). https://doi.org/10.1088/0953-8984/17/22/013