Cadmium Sulfide–Porous Silicon Nanocomposite Structures

Authors

  • N. A. Davidenko Taras Shevchenko National University of Kyiv, Institute of High Technologies
  • G. V. Kuznetsov Taras Shevchenko National University of Kyiv, Institute of High Technologies
  • Yu. S. Milovanov Taras Shevchenko National University of Kyiv, Institute of High Technologies

DOI:

https://doi.org/10.15407/ujpe58.02.0163

Keywords:

porous silicon, CdS nanoparticles

Abstract

Optimum conditions for the formation of cadmium sulfide nanoparticles in a porous silicon matrix have been determined. The mechanisms of charge transfer in the formed heterostructures and their dependences on the porous layer properties and conditions of CdS nanoparticle synthesis have been studied. The spectral distribution and the intensity of photoluminescence are demonstrated to be governed by the concentration and the size of synthesized CdS nanocrystallites, as well as the efficiency of radiation recombination at deep centers bound with defects.

References

<ol>
<li> Ordered Porous Nanostructures and Applications, edited by R.B. Wehrspohn (Springer, New York, 2005).</li>
<li> T. Serdiuk, V.A. Skryshevsky, I.I. Ivanov, and V.Lysenko, Mater. Lett. 65, 2514 (2011).&nbsp;<a href="https://doi.org/10.1016/j.matlet.2011.05.033">CrossRef</a></li>
<li> E.B. Kaganovich, E.G. Manoilov, I.R. Basylyuk, and S.V. Svechnikov, Semiconductors 37, 353 (2003).&nbsp;<a href="https://doi.org/10.1134/1.1561529">CrossRef</a></li>
<li> A. Gokarna, N.R. Pavaskar, S.D. Sathaye, V. Ganesan, and S.V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).&nbsp;<a href="https://doi.org/10.1063/1.1483381">CrossRef</a></li>
<li> V. Lysenko, V. Onyskevych, O. Marty, V.A. Skryshevsky, Y. Chevolot, and C. Bru-Chevallier, Appl.Phys. Lett. 92, 251910 (2008).&nbsp;<a href="https://doi.org/10.1063/1.2948955">CrossRef</a></li>
<li> A.Y Karlach, G.V. Kuznetsov, S.V. Litvinenko, Y.S. Milovanov, and V.A. Skryshevsky, Semiconductors 44, 1342 (2010).&nbsp;<a href="https://doi.org/10.1134/S1063782610100179">CrossRef</a></li>
<li> N.V. Bondar and M.S. Brodyn, Ukr. J. Phys. 54, 130 (2009).</li>
<li> N.V Deshmukh., T.M. Bhave, A.S. Ethiraj, S.R. Sainkar, V. Ganesan, S.V. Bhoraskar, and S.K. Kulkarni, Nanotechnology 12, 290 (2001).&nbsp;<a href="https://doi.org/10.1088/0957-4484/12/3/316">CrossRef</a></li>
<li> M.M. Vorontsova, N.V. Malushin, V.M. Skobeeva, and V.A. Smyntyna, Fotoelektronika 11, 104 (2002).</li>
<li> G.S. Khrypunov, V.R. Kopach, A.V. Meriuts, R.V. Zaitsev, M.V. Kirichenko, and N.V. Deyneko, Semiconductors 45, 1564 (2011).&nbsp;<a href="https://doi.org/10.1134/S1063782611110133">CrossRef</a></li>
<li> V.A. Skryshevsky, Appl. Surf. Sci. 157, 145 (2000).&nbsp;<a href="https://doi.org/10.1016/S0169-4332(99)00560-7">CrossRef</a></li>
<li> B.M. Bulakh, N.E. Korsunska, L.Yu. Khomenkova, T.R. Stara, and M.K. Sheinkman, Semiconductors 40, 614 (2006).&nbsp;<a href="https://doi.org/10.1134/S1063782606050150">CrossRef</a></li>
<li> A. Korcala, W. Ba la, A. Bratkowski, P. Borowski, and Z. Lukasiak, Opt. Mater. 28, 143 (2006).&nbsp;<a href="https://doi.org/10.1016/j.optmat.2004.10.036">CrossRef</a></li>
<li> V.A. Skryshevsky, A. Laugier, V.I. Strikha, and V.A. Vikulov, Mater. Sci. Eng. B 40, 54 (1996).&nbsp;<a href="https://doi.org/10.1016/0921-5107(96)01572-3">CrossRef</a></li>
<li> G.A. Ilchuk, V.V. Kusnezh, V.Yu. Rud, Yu.V. Rud, P.Yo. Shapowal, and R.Yu. Petrus, Semiconductors 44, 335 (2010).</li>
<li> V.A. Vikulov, V.I. Strikha, V.A. Skryshevsky, S.S. Kilchitskaya, E. Souteyrand, and J.R. Martin, J. Phys. D 33, 1957 (2000).&nbsp;<a href="https://doi.org/10.1088/0022-3727/33/16/304">CrossRef</a></li>
<li> V. Strikha, V. Skryshevsky, V. Polishchuk, E. Souteyrand, and J.R. Martin, J. Porous Mater. 7, 111 (2000).&nbsp;<a href="https://doi.org/10.1023/A:1009634720436">CrossRef</a></li>
<li> A.A. Evtukh, Ukr. J. Phys. 54, 308 (2009).</li>
<li> V.B. Lazarev, V.G. Krasov, and I.S. Shaplygin, Electric Conductivity of Oxide Systems and Film Structures (Nauka, Moscow, 1979) (in Russian).</li>
<li> I.V. Gavrilchenko, S.A. Diachenko, G.V. Kuznetsov, V.A. Skryshevsky, and Y.A. Pervak, Visn. Kyiv. Univ. Ser. Fiz. Mat. Nauky 8, 41 (2005).</li>
<li> E.A. Tutov, A.Yu. Andryukov, and E.N. Bormontov, Semiconductors 35, 850 (2001).&nbsp;<a href="https://doi.org/10.1134/1.1385718">CrossRef</a></li>
<li> V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutyak, and V.G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987) (in Russian).</li>
<li> P. Zhang, P.S. Kim, and T.K. Sham, J. Appl. Phys. 91, 6038 (2002).&nbsp;<a href="https://doi.org/10.1063/1.1461888">CrossRef</a></li>
<li> L.E. Brus, Al. Efros, and T. Itoh, J. Lumin. 76, 1 (1996).</li>
<li> Yu.Yu. Bacherikov, I.Z. Indutnyi, O.B. Okhrimenko, S.V. Optasyuk, P.Ye. Shepeliavyi, and V.V. Ponamarenko, Semiconductors 45, 1235 (2011).&nbsp;<a href="https://doi.org/10.1134/S1063782611090028">CrossRef</a></li>
<li> G. Ma, S. Tang, W. Sun, Z. Shen, W. Huang, and J. Shi, Phys. Lett. A 299,581 (2002).&nbsp;<a href="https://doi.org/10.1016/S0375-9601(02)00680-1">CrossRef</a></li>
<li> Y. Kanemitsua and A. Ishizumi, J. Lumin. 119–120, 161 (2006).&nbsp;<a href="https://doi.org/10.1016/j.jlumin.2005.12.026">CrossRef</a></li>
<li> V.N. Bondarev and P.V. Pikhitsa, Fiz. Tverd. Tela 43, 2142 (2001).</li>
</ol>

Published

2018-10-05

How to Cite

Davidenko, N. A., Kuznetsov, G. V., & Milovanov, Y. S. (2018). Cadmium Sulfide–Porous Silicon Nanocomposite Structures. Ukrainian Journal of Physics, 58(2), 163. https://doi.org/10.15407/ujpe58.02.0163

Issue

Section

Nanosystems