Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

A. V. Sachenko; V. P. Kostylyov; V. G. Litovchenko; V. G. Popov; B. M. Romanyuk; V. V. Chernenko; V. M. Naseka; T. V. Slusar; S. I. Kyrylova; F. F. Komarov

doi:10.15407/ujpe58.02.0142

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

Authors

A. V. Sachenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. P. Kostylyov V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. G. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. G. Popov V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
B. M. Romanyuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. V. Chernenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. M. Naseka V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
T. V. Slusar National Aviation University
S. I. Kyrylova V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
F. F. Komarov A.N. Sevchenko Institute for Applied Physical Problems, Belarusian State University

DOI:

https://doi.org/10.15407/ujpe58.02.0142

Keywords:

surface photovoltage, surface recombination, silicon

Abstract

Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, the
formation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface.

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Published

2018-10-05

How to Cite

Sachenko, A. V., Kostylyov, V. P., Litovchenko, V. G., Popov, V. G., Romanyuk, B. M., Chernenko, V. V., Naseka, V. M., Slusar, T. V., Kyrylova, S. I., & Komarov, F. F. (2018). Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer. Ukrainian Journal of Physics, 58(2), 142. https://doi.org/10.15407/ujpe58.02.0142

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Issue

Vol. 58 No. 2 (2013)

Section

Solid matter

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