Features of Charge Transport in Mo/n-Si Structures with a Schottky Barrier
DOI:
https://doi.org/10.15407/ujpe58.02.0126Keywords:
inhomogeneous Schottky barrier, thermionic emission, siliconAbstract
Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are analyzed in the framework of a non-uniform contact model. The average value and the standard deviation of a Schottky barrier height are determined to be 0.872 and 0.099 V, respectively, at T = 130220 K and 0.656 and 0.036 V, respectively, at T = 230330 K. Thermionic emission over the non-uniform barrier and tunneling are shown to be the dominant processes of charge transfer at a reverse bias voltage.
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