The Spectra of X-ray and Photoluminescence of High-Resistance Crystals of ZnSe
DOI:
https://doi.org/10.15407/ujpe63.6.557Keywords:
spectra of X-ray luminescence, spectra of photoluminescence, center of recombination, temperature dependences of the spectral position of the maximum and half-width of the band, zinc selenideAbstract
The luminescence spectra of high-resistance ZnSe crystals consist of two main bands with maxima at 630 nm (1.92 eV) and 970 nm (1.28 eV). The planned comparison has been carried out between the spectra of X-ray luminescence and photoluminescence of ZnSe among themselves in the spectral region from 400 to 1200 nm at different excitation intensities and different temperatures (8, 85, 295, and 420 K). It is found that the forms of luminescence bands do not depend on the excitation intensities. The band form with a maximum at 970 nm also does not depend on the excitation type, and the band at 630 nm differs slightly under the X-ray and UV excitations. The temperature dependences of the spectral positions of bands’ maxima and their half-widths are analyzed. A conclusion is drawn that the 970-nm emission band is elementary. A short-wavelength shift of the spectral maximum of the 630-nm band with increasing the temperature makes it possible to conclude that this luminescence band is non-elementary. This correlates with the previously discovered feature of this band related to the realization of two recombination mechanisms (electron and hole) at this luminescent center.
References
<li>V. Ryzhikov, N. Starzhinskiy, K. Katrunov, L. Gal'chinetskii. Absolute light yield of ZnSe(Te) and ZnSe(Te,O). Functional Materials 9 (1), 135 (2002).
</li>
<li>A.O. Sofiienko, V.Ya. Degoda. X-ray induced conductivity of ZnSe sensors at high temperatures. Radiation Measurements 47 (1), 27 (2012).
<a href="https://doi.org/10.1016/j.radmeas.2011.08.017">https://doi.org/10.1016/j.radmeas.2011.08.017</a>
</li>
<li>M.S. Brodin, V.Ya. Degoda, B.V. Kozhushko, A.O. Sofiienko, V.T. Vesna. Monocrystalline ZnSe as an ionising radiation detector operated over a wide temperature range. Radiation Measurements 65, 36 (2014).
<a href="https://doi.org/10.1016/j.radmeas.2014.04.016">https://doi.org/10.1016/j.radmeas.2014.04.016</a>
</li>
<li>V.D. Ryzhikov et al. New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon. IEEE Trans. Nucl. Sci. 48 (1), 356 (2001).
<a href="https://doi.org/10.1109/23.940080">https://doi.org/10.1109/23.940080</a>
</li>
<li>V.M. Koshkin, A.Ya. Dulfan, V.D. Ryzhikov et al. Thermodynamics of isovalent tellurium substitution for selenium in ZnSe semiconductors. J. Functional materials 8 (4), 708 (2001).
</li>
<li>G. Watkins. Defects of Lattice in Compounds A2B6. In: Point Defects of Lattice (Mir, 1979), p. 1150 (in Russian).
</li>
<li>L.V. Atroschenko, L.P. Gal'chinetskii, S.N. Galkin et al. Structure defects and phase transition in tellurium-doped ZnSe crystals. J. Cryst. Growth 197, 475 (1999).
<a href="https://doi.org/10.1016/S0022-0248(98)00964-6">https://doi.org/10.1016/S0022-0248(98)00964-6</a>
</li>
<li>N.K. Morozova, I.A. Karetnikov, V.V. Blinov, E.M. Gavrishchuk. A study of luminescence centers related to copper and oxygen in ZnSe. Semiconductors 35 (1) 24 (2001).
<a href="https://doi.org/10.1134/1.1340285">https://doi.org/10.1134/1.1340285</a>
</li>
<li>N.K. Morozova, I.A. Karetnikov, V.V. Blinov, E.M. Gavrishchuk. Studies of the infrared luminescence of ZnSe doped with copper and oxygen. Semiconductors 35 (5) 512 (2001).
<a href="https://doi.org/10.1134/1.1371612">https://doi.org/10.1134/1.1371612</a>
</li>
<li> K.K. Rebane. Elementary Theory of the Vibrational Structure of Spectra of Admixture Centers in Crystals (Nauka, 1968) (in Russian).
</li>
<li> A.F. Lubchenko. Quantum Transitions in Admixture Centers in Solids (Naukova Dumka, 1978) (in Russian).
</li>
<li> V.E. Lashkarev, A.V. Lyubchenko, M. Sheinkman. Nonequilibrium Processes in Photoconductors (Naukova Dumka, 1981) (in Russian).
</li>
<li> I.Ya. Gorodetskii, K.K. Dubenskii, V.E. Lashkarev et al. Determination of parameters of recombination centers in ZnSe monocrystals. Fiz. Tekhn. Polupr. 1 (11), 1666 (1967).
</li>
<li> V.Ya. Degoda, N.Yu. Pavlova, G.P. Podust, A.O. Sofiienko. Spectral structure of the X-ray stimulated phosphorescence of monocrystalline ZnSe. Physica B: Condensed Matter. 465, 1 (2015).
<a href="https://doi.org/10.1016/j.physb.2015.02.021">https://doi.org/10.1016/j.physb.2015.02.021</a>
</li>
<li> M. Alizadeh, V.Ya. Degoda, B.V. Kozhushko, N.Yu. Pavlova. Luminescence of dipole-centers in ZnSe crystals. Functional Materials 24 (2), 206 (2017).
<a href="https://doi.org/10.15407/fm24.02.206">https://doi.org/10.15407/fm24.02.206</a></li>
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
