Correlation between Photoluminescent and Photoelectrical Properties of Mn-Doped ZnO

N. O. Korsunska; I. V. Markevich; T. R. Stara; L. V. Borkovska; S. Lavoric; L. Yu. Melnichuk; O. V. Melnichuk

doi:10.15407/ujpe63.7.660

Correlation between Photoluminescent and Photoelectrical Properties of Mn-Doped ZnO

Authors

N. O. Korsunska V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
I. V. Markevich V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
T. R. Stara V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
L. V. Borkovska V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
S. Lavoric V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
L. Yu. Melnichuk Mykola Gogol State University of Nizhyn
O. V. Melnichuk Mykola Gogol State University of Nizhyn

DOI:

https://doi.org/10.15407/ujpe63.7.660

Keywords:

zinc oxide, Mn2, photoluminescence, photoconductivity

Abstract

ZnO ceramics undoped and doped with manganese are investigated. The Mn content NMn is varied from 1019 to 1021 cm−3. The photoluminescence (PL), diffuse reflection, and photoconductivity (PC) spectra are measured. The quenching of the self-activated ZnO emission and the appearance of the light absorption and PC are observed in the same spectral region (400–600 nm) under the doping. Simultaneously, a week PL band peaked at 645 nm arose and was assigned to intra-shell transitions in Mn2+Zn centers. Based on the analysis of obtained results, the quenching effect is attributed to the re-absorption of the self-activated ZnO emission by Mn ions. A scheme of electron transitions that allows an explanation of the low intensity of the Mn-related emission is proposed.

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Published

2018-08-02

How to Cite

Korsunska, N. O., Markevich, I. V., Stara, T. R., Borkovska, L. V., Lavoric, S., Melnichuk, L. Y., & Melnichuk, O. V. (2018). Correlation between Photoluminescent and Photoelectrical Properties of Mn-Doped ZnO. Ukrainian Journal of Physics, 63(7), 660. https://doi.org/10.15407/ujpe63.7.660

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Issue

Vol. 63 No. 7 (2018)

Section

Semiconductors and dielectrics

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