Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

  • O. G. Trubaieva Institute for Scintillation Materials of the NAS of Ukraine (60, Nauky Ave., Kharkiv 61072, Ukraine)
  • A. I. Lalayants Institute for Scintillation Materials of the NAS of Ukraine (60, Nauky Ave., Kharkiv 61072, Ukraine)
  • M. A. Chaika Institute for Single Crystals of the NAS of Ukraine (60, Nauky Ave., Kharkiv 61072, Ukraine)


ZnSxSe1−x bulk crystals were grown by the Bridgman–Stockbarger method. The transmittance of different samples in the range from 67% to 56% at la = 1100 nm (for 4-mm samples) indicates a high optical quality of the crystals. No new states were revealed at the sulfur incorporation, and the band gap depends on the composition. The optical band gap of ZnSxSe1−x bulk crystals varies from 2.59 to 2.78 eV for direct transitions and from 2.49 to 2.70 eV for indirect transitions.

Keywords ZnSxSe1−x bulk crystals, direct transitions, indirect transitions, band gap


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How to Cite
Trubaieva, O., Lalayants, A., & Chaika, M. (2018). Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content. Ukrainian Journal Of Physics, 63(1), 33-37. Retrieved from
Semiconductors and dielectrics