Stationary and Time-Resolved Photoluminescence of Nanostructured Tin Sulfide Films
DOI:
https://doi.org/10.15407/ujpe71.4.331Keywords:
photoluminescence, kinetics, band gap, defects, phase state, nanostructured filmsAbstract
In this work, the optical properties, including the photoluminescence spectra and their kinetics, of thick SnS films in the orthorhombic phase with low-level microdeformation were studied. They have the composition close to the stoichiometry. Besides, these films contain a small quantity of other crystalline phases, namely, SnS, SnS2, SnO2 and, possibly, Sn2S3 phases. The study of the absorption coefficient first and second derivative spectra, i.e. the ACFD and ACSD spectra, allowed us to determine exactly the band gaps of various crystalline phases. The analysis of ACSD spectra also makes it possible to obtain information regarding the homogeneity of the investigated nanomaterials, which is very important for the optimization of their crystal and optical quality. The study of the photoluminescence spectra allowed us to obtain information regarding the energy structure of the nanostructured SnS films and the nature of their defects. Based on the photoluminescence decay kinetics measurements, the lifetime distributions for different recombination processes in SnS2 and SnO2 were studied. Such studies made it possible to determine the lifetimes for various recombination processes and thus obtain additional information about their nature associated with a certain type of optical transitions, which are determined by the energy of such optical transitions. It was shown that the excited-state lifetimes in the investigated films are in the nanosecond range. Thus, the results obtained may help to develop new fast-acting, efficient nanomaterials suitable for creating ecological absorber layers for solar cells based on them.
References
1. M.A. Green, E.D. Dunlop, M. Yoshita, N. Kopidakis, K. Bothe, G. Siefer, X. Hao, J.Y. Jiang. Solar cell efficiency tables (Version 66). Progress in Photovoltaics: Res. Appl. 33, 795 (2025).
https://doi.org/10.1002/pip.3919
2. https://www.longi.com/en/news/.
3. B.M. Kayes, H. Nie, R. Twist et al. 27.6% conversion efficiency, a new record for single-junction solar cells under 1 sun illumination. In: Proceedings of the 37th IEEE Photovoltaic Specialists Conference (2011).
https://doi.org/10.1109/PVSC.2011.6185831
4. M. Nakamura, K. Yamaguchi, Y. Kimoto, Y. Yasaki, T. Kato, H. Sugimoto. Cd-free Cu (In, Ga)(Se, S)2 thin-film solar cell with a new world record efficacy of 23.35%. In: 46th IEEE PVSC, Chicago, IL, June 19, 2019 (see also http://www.solar-frontier.com/eng/news/2019/0117_press.html).
https://doi.org/10.1109/JPHOTOV.2019.2937218
5. M.J. Keevers, T.L. Young, U. Schubert, M.A. Green. 10% efficient CSG minimodules. In: 22nd European Photovoltaic Solar Energy Conference, Milan (2007).
6. L. Han, A. Fukui, Y. Chiba et al. Integrated dye-sensitized solar cell module with conversion efficiency of 8.2%. Appl. Phys. Lett. 94, 013305 (2009).
https://doi.org/10.1063/1.3054160
7. L. Han, A. Fukui, Y. Chiba et al. Integrated dye-sensitized solar cell module with conversion efficiency of 8.2%. Appl. Phys. Lett. 94, 013305 (2009).
https://doi.org/10.1063/1.3054160
8. J. Faisst, E. Jiang, S. Bogati et al. Organic solar cell with an active area >1 cm2 achieving 15.8% certified efficiency using optimized VIS-NIR anti-reflection coating. Solar RRL 7, 2300663 (2023).
https://doi.org/10.1002/solr.202300663
9. S. Sohila, M. Rajalakshmi, Chanchal Ghosh, A.K. Arora, C. Muthamizhchelvan. Optical and Raman scattering studies on SnS nanoparticles. J. Alloys and Compounds 509, 5843 (2011).
https://doi.org/10.1016/j.jallcom.2011.02.141
10. G.H. Yue, W.Wang, L.S. Wang, X. Wang, P.X. Yan, Y. Chen, D.L. Peng. The effect of anneal temperature on physical properties of SnS films. J. Alloys and Compounds 474, 445 (2009).
https://doi.org/10.1016/j.jallcom.2008.06.105
11. Juran Kim, Jayeong Kim, Seokhyun Yoon, Jeong-yoon Kang, Chan Wook Jeon, William Jo. Single phase formation of sns competing with SnS2 and Sn2S3 for photovoltaic applications: Optoelectronic characteristics of thinfilm surfaces and interfaces. J. Phys. Chem. C 122 (6), 3523 (2018).
12. Yu. Kumagai, L.A. Burton, A. Walsh, F. Oba. Electronic structure and defect physics of tin sulfides: SnS, Sn2S3, and SnS2. Phys. Rev. Appl. 6, 014009 (2016).
13. Md A.M. Patwary, Md A.Hossain, B.C. Ghos, J. Chakrabarty, S.R. Haque, S.A. Rupa, J. Uddin, T. Tanaka. Copper oxide nanostructured thin films processed by SILAR for optoelectronic applications, RSC Advances 12, 32853 (2022).
https://doi.org/10.1039/D2RA06303D
14. X. Han, L. Wang, H. Ling, Z. Ge, X. Lin, X. Dai, H. Chen. Critical review of thermochemical energy storage systems based on cobalt, manganese, and copper oxides. Renewable and Sustainable Energy Reviews 158, 112076 (2022).
https://doi.org/10.1016/j.rser.2022.112076
15. A.S. Zoolfaka, R.A. Rani, A.J. Morfa, A.P. O'Mullane, K. Kalantar-zadeh. Nanostructured copper oxide semiconductors: a perspective on materials, synthesis methods and applications, J. Mater. Chem. C 2, 5247 (2014).
https://doi.org/10.1039/C4TC00345D
16. D. Cabrera-Germana, J.A. Garc'ıa-Valenzuelab, M. CotaLeala, M. Mart'ınez-Gila, R. Acevesd, M. Sotelo-Lerma. Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures. Mater. Sci. Semicond. Process. 89, 131 (2019).
https://doi.org/10.1016/j.mssp.2018.09.009
17. I. Ammar, A. Gassoumi, A. Akkari, F. Delpech, S. Ammar, N. Turki-Kamoun. Deposition of SnS thin films by chemical bath deposition method: Effect of surfactants. Eur. Phys. J. Plus. 134, 505 (2019).
https://doi.org/10.1140/epjp/i2019-12976-3
18. W. Shan, Z. Fu, M. Ma, Z. Liu, Z. Xue, J. Xu, F. Zhang, Yo. Li. Facile Chemical bath synthesis of sns nanosheets and their ethanol sensing properties. Sens. 19, 2581 (2019).
https://doi.org/10.3390/s19112581
19. E. Sutter, J. Wang, P. Sutter. Surface passivation by excess sulfur for controlled synthesis of large, Thin SnS flakes. Chem. Mater. 32 (18), 8034 (2020).
https://doi.org/10.1021/acs.chemmater.0c03297
20. K.J. Yu, Z. Yan, M. Han, J.A. Rogers. Inorganic semiconducting materials for flexible and stretchable electronics. npj Flexible Electronics 1, 4 (2017).
https://doi.org/10.1038/s41528-017-0003-z
21. G. Qinglei, Di Zengfeng. Inorganic Flexible Electronics: Materials, Strategies, and Applications. Editor by Yongfeng Mei, Gaoshan Huang, Xiuling Li (Wiley, 2022).
https://doi.org/10.1002/9783527813933.ch4
22. S. Huang, Y. Liu, Y. Zhao, Z. Ren, C.F. Guo. Flexible Electronics: Stretchable electrodes and their future. Adv. Funct. Mater. 29, 1805924 (2019).
https://doi.org/10.1002/adfm.201805924
23. P. Pramanik, P.K. Basu, S. Biswas. Preparation and characterization of chemically deposited tin(II) sulphide thin films. Thin Solid Films 150, 269 (1987).
https://doi.org/10.1016/0040-6090(87)90099-X
24. G. Valiukonis, D.A. Guseinova, G. Krivaite, A. Sileica. Optical spectra and energy band structure of layertype AIVBVI compounds. Phys. Status Solidi B 135, 299 (1986).
https://doi.org/10.1002/pssb.2221350130
25. T. Jiang, G.A. Ozin, A. Verma, R.L. Bedard, Adsorption and sensing properties of microporous layered tin sulfide materials. J. Mater. Chem. 7, 1649 (1998).
https://doi.org/10.1039/a801501e
26. L.A. Burton, D. Colombara, R.D. Abellon, F.C. Grozema, L.M. Peter, T.J. Savenije, G. Dennler, A. Walsh. Synthesis, characterization, and electronic structure of single crystal SnS, Sn2S3, and SnS2. Chem. Mater. 25, 4908 (2013).
https://doi.org/10.1021/cm403046m
27. Juran Kim, Jayeong Kim, Seokhyun Yoon, Jeong-yoon Kang, Chan Wook Jeon, William Jo. Single phase formation of SnS competing with SnS2 and Sn
2S3 for photovoltaic applications: Optoelectronic characteristics of thinfilm surfaces and interfaces. J. Phys. Chem. C 122 (6), 3523 (2018).
https://doi.org/10.1021/acs.jpcc.8b00179
28. Yu. Kumagai, L.A. Burton, A. Walsh, F. Oba. Electronic structure and defect physics of tin sulfides: SnS, Sn2S3, and SnS2, Phys. Rev. App. 6, 014009 (2016).
29. L.A. Burton, D. Colombara, R.D. Abellon, F.C. Grozema, L.M. Peter, T.J. Savenije, G. Dennler, A. Walsh. Synthesis, characterization, and electronic structure of single crystal SnS, Sn2S3, and SnS2. Chem. Mater. 25, 4908 (2013).
https://doi.org/10.1021/cm403046m
30. G.L. Arauujo, A. Marti. Absolute limiting efficiencies for photovoltaic energy conversion. Sol. Energy Mater. Sol. Cells. 33, 213 (1994).
https://doi.org/10.1016/0927-0248(94)90209-7
31. A.R. Garcia-Angelmo, R. Romano-Trujillo, J. CamposAlvarez, O. Gomez-Daza, M.T.S. Nair, P.K. Nair. Thin film solar cell of SnS absorber with cubic crystalline structure. Phys. Status Solidi A 212 (10), 2332 (2015).
https://doi.org/10.1002/pssa.201532405
32. Yu.P. Gnatenko, A.P. Bukivskii, V.Yu. Yevdokymenko, A.S. Opanasyuk, P.M. Bukivskij, S.A. Iliash, I.G. Vertegel, O.I. Ovcharenko, R.V. Gamernyk. Optical and photoelectric properties of nanostructured SnS films obtained by spraying ink using a nanoparticle suspension. Mater. Res. Express 11 (12), 125002 (2024).
https://doi.org/10.1088/2053-1591/ad9b73
33. V. Yevdokymenko, R. Pshenychnyi, О. Dobrozhan, A. Opanasyuk, Yu. Gnatenko, P. Bukivskij, O. Klymov, V. Mu˜noz-Sanjos'e. Structural, microstructural, and optical properties of SnS films deposited by spraying the nanoink with post-growth temperature treatment. Appl. Phys. A 130, 593 (2024).
https://doi.org/10.1007/s00339-024-07752-9
34. https://www.edinst.com/product/advanced-fast-software/.
35. FAST Advanced Analysis of Fluorescence Kinetics (Edinburgh Instruments Ltd, 2011).
36. A.P. Bukivskii, Yu.P. Gnatenko, Yu.P. Piryatinski. Photoluminescence lifetime studies of PbI2 nanoclusters and microcrystallites in Pb0.30Cd0.70I2 alloys. J. Phys. Chem. Sol. 120, 147 (2018).
https://doi.org/10.1016/j.jpcs.2018.04.039
37. A.P. Bukivskii, Yu.P. Gnatenko. Study of the photoluminescence kinetics of heterogeneous nanostructured Pb0.30Cd0.70I2 solid solutions. Mater. Chem. Phys. 199, 577 (2017).
https://doi.org/10.1016/j.matchemphys.2017.07.045
38. Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, A.P. Bukivskii, P.A. Skubenko, R.V. Gamernyk. Time-resolved photoluminescence spectroscopy of excitons in layered semiconductor PbI2 nanoclusters. J. Appl. Phys. 112, 093708 (2012).
https://doi.org/10.1063/1.4764315
39. A.P. Bukivskii, Yu.P. Gnatenko, P.M. Bukivskij, M.S. Furier, L.M. Tarakhan, R.V. Gamernyk. Photoluminescence and photoelectric properties of CdTe crystals doped with Mo. Physica B: Condensed Matter. 546, 411737 (2020).
https://doi.org/10.1016/j.physb.2019.411737
40. J. Tauc. Optical properties and electronic structure of amorphous Ge and Si. Mater. Res. Bull. 3, 37 (1968).
https://doi.org/10.1016/0025-5408(68)90023-8
41. Yu.P. Gnatenko, P.M. Bukivskij, M.S. Furier, A.P. Bukivskii, A.S. Opanasyuk. Temperature dependence of the band gap of high optical quality CdS: Dy thin films based on exciton spectra. Mater. Res. Express 5, 125902 (2018).
https://doi.org/10.1088/2053-1591/aae298
42. Yu.P. Gnatenko, I.O. Faryna, P.M. Bukivskij, O.A. Shigiltchoff, R.V. Gamernyk, S.Yu. Paranchych, L.D. Paranchych. Optical and photoelectric properties of vanadiumdoped Cd1−xHgxTe crystals. J. Phys.: Condensed Matter 14 (29), 7027 (2002).
https://doi.org/10.1088/0953-8984/14/29/304
43. Yu.P. Gnatenko, Yu.P. Piryatinski, R.V. Gamernyk, I.O. Faryna, P.M. Bukivskij, S.Yu. Paranchych, L.D. Paranchych. Elaboration of new uncooled detector materials highly sensitive in the near-IR region. SPIE, Materials for Infrared Detectors III, V, 5209, 156 (2003).
https://doi.org/10.1117/12.516446
44. Z. Zainal, M.Z. Hussein, A. Ghazali. Cathodic electrodeposition of SnS thin films from aqueous solution. Sol. Energy Mater. Sol. Cells 40, 347 (1996).
https://doi.org/10.1016/0927-0248(95)00157-3
45. W. Albers, C. Haas, H.J. Vink, J.D. Wasscher. Investigations on SnS. J. Appl. Phys. 32, 2220 (1961).
https://doi.org/10.1063/1.1777047
46. S. Lopez, A. Ortiz. Spray pyrolysis deposition of SnxSy thin films. Semicond. Sci. Technol. 9, 2130 (1994).
https://doi.org/10.1088/0268-1242/9/11/016
47. O.E. Ogah, G. Zoppi, I. Forbes, R. Miles. Thermally evaporated thin films of SnS for application in solar cell devices. Thin Solid Films 517, 2485 (2009).
https://doi.org/10.1016/j.tsf.2008.11.023
48. M. Calixto-Rodriguez, H. Martinez, A. Sanchez-Juarez, J. Campos-Alvarez, A. Tiburcio-Silver, M. Calixto. Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis. Thin Solid Films 517, 2497 (2009).
https://doi.org/10.1016/j.tsf.2008.11.026
49. A.J. Ragina, K.V. Murali, K.C. Preetha, K. Deepa, T.L. Remadevi. A study of optical parameters of tin sulphide thin films using the swanepoel method. In: Optics: Phenomena, Materials, Devices, and Characterization 2011: International Conference on Light, AIP Conference Proceedings 1391, 752 (2011).
https://doi.org/10.1063/1.3643669
50. A. Voznyi, V. Kosyak, P. Onufrijevs, L. Grase, J. Vecstaudˇza, A. Opanasyuk, A. Medvid'. Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films. J. Alloys Compd. 688, 130 (2016).
https://doi.org/10.1016/j.jallcom.2016.07.103
51. L. Attou, B. Jaber, H. Ez-Zahraouy. Effect of annealing temperature on structural, optical and photocatalytic properties of CuO nanoparticles, Mediterr. J. Chem. 7 (5), 308 (2018).
https://doi.org/10.13171/mjc751911261230la
52. A.E. Abdelrahman, W.M.M. Yunus, A.K. Arof. Optical properties of tin sulphide (SnS) thin film estimated from transmission spectra. J. Non-Cryst. Solids. 358, 1447 (2012).
https://doi.org/10.1016/j.jnoncrysol.2012.03.022
53. N.R. Mathews, C.C. Garc'ıa, I.Z. Torres. Effect of annealing on structural, optical and electrical properties of pulse electrodeposited tin sulfide films. Mater. Sci. Semicond. Process. 16, 29 (2013).
https://doi.org/10.1016/j.mssp.2012.07.003
54. M. Reghima, A. Akkari, C. Guasch, N. Turki-Kamoun. Structure. Surface morphology, and optical and electronic properties of annealed sns thin films obtained by CBD. J. Electron. Mater. 43, 3138 (2014).
https://doi.org/10.1007/s11664-014-3269-0
55. J. Xu, Y. Yang, Z. Xie. Effect of vacuum annealing on the properties of sputtered SnS thin films. Chalcogenide Lett. 11, 485 (2014).
56. T. Gotoh. Control of carrier concentration in SnS films by annealing with S and Sn. Phys. Status Solidi A 213, 1869 (2016).
https://doi.org/10.1002/pssa.201532986
57. P. Jain, P. Arun. Influence of grain Size on the Band-gap of Annealed SnS Thin Films. Thin Solid Films 548, 241 (2013).
https://doi.org/10.1016/j.tsf.2013.09.089
58. O.E. Ogah, K.R. Reddy, G. Zoppi, I. Forbes, R.W. Miles. Annealing studies and electrical properties of SnS-based solar cells. Thin Solid Films 511, 7425 (2011).
https://doi.org/10.1016/j.tsf.2010.12.235
59. N. Revathi, S. Bereznev, M. Loorits, J. Raudoja, J. Lehner, J. Gurevits, R. Traksmaa, V, Mikli, E. Mellikov, O. Volobujeva. Annealing effect for SnS thin films prepared by high-vacuum evaporation. J. Vac. Sci. Technol. A. 32, 061506 (2014).
https://doi.org/10.1116/1.4896334
60. N.K. Samani, Z.D. Tafti, H.A. Bioki, M.B. Zarandi, S. Shayegh. Annealing effect on structural and optical constants of SnS thin films for solar cells application. Optik. 131, 231 (2017).
https://doi.org/10.1016/j.ijleo.2016.08.129
61. Yu.P. Gnatenko, O.A. Shigil'chev, E. Rutkovskii, G. Contreras-Puente, M. Cardenas-Garcia. Photoluminescence and multiphonon resonant Raman scattering in Ni-and Codoped Zn1−xMnxTe crystals. Phys. Solid State 40, 564 (1998).
https://doi.org/10.1134/1.1130353
62. Yu.P. Gnatenko, A.S. Opanasyuk, M.M. Ivashchenko, P.M. Bukivskij, I.O. Faryna. Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation. Mater. Sci. Semicond. Proc. 26, 663 (2014).
https://doi.org/10.1016/j.mssp.2014.06.013
63. Yu.S. Yeromenko, Yu.P. Gnatenko, A.S. Opanasyuk, D.I. Kurbatov, P.M. Bukivskij, M.S. Furier, V. Kuznetsov, A.P. Bukivskii. Photoluminescence of high optical quality CdS: Dy thin films deposited by close-spaced vacuum sublimation. J. Luminescence, 197, 343 (2018).
https://doi.org/10.1016/j.jlumin.2018.01.061
64. A.P. Bukivskii, Yu.P. Gnatenko, Yu.P. Piryatinskii, R.V. Gamernyk. Nature of radiative recombination processes in layered semiconductor PbCdI2 nanostructural scintillation material. J. Luminescence 185, 83 (2017).
https://doi.org/10.1016/j.jlumin.2016.12.054
65. M. Devika1, N. Koteeswara Reddy, M. Prashantha, K. Ramesh, S. Venkatramana Reddy, Y.B. Hahn, K.R. Gunasekhar. The physical properties of SnS filmsgrown on lattice-matched and amorphous substrates, Phys. Status Solidi A 207, 1864 (2010).
https://doi.org/10.1002/pssa.200925379
66. Smritimala Sarmah, A. Kumaю Optical properties of SnO2 nanoparticles. Indian J. Phys 84, 1211 (2010).
https://doi.org/10.1007/s12648-010-0109-9
67. N.G. Deshpande, A.A. Sagade, Y.G. Gudage, C.D. Lokhande. Ramphal Sharma, Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique. J. Alloys and Compounds 436, 421 (2007).
Downloads
Published
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
