Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures

Authors

  • V. V. Hladkovskiy Institute for Nuclear Research, Nat. Acad. of Sci. of Ukraine
  • O. A. Fedorovich Institute for Nuclear Research, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe62.03.0208

Keywords:

bias voltage, plasma-chemical etching, sputtering, plasma-chemical reactor, radio-frequency discharge, optical spectroscopy

Abstract

The results of experimental researched dealing with the bias voltage influence on the evolution of spectra emitted by plasma at the etching of gallium nitride in a plasma-chemical reactor with the controlled magnetic field are reported. At high bias voltage values above –250 V, there appear lines in the plasma emission spectra which belong to the excited atoms of the material of a working electrode. Under the influence of a negative potential, the active electrode is sputtered, and metal ions are redeposited onto its surface, which results in the lower etching rate.

References

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UJP 2017 V62 #3

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Published

2018-12-16

Issue

Vol. 62 No. 3 (2017)

Section

Plasmas and gases

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How to Cite

Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures. (2018). Ukrainian Journal of Physics, 62(3), 208. https://doi.org/10.15407/ujpe62.03.0208

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