Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

Authors

  • A. V. Sachenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. P. Kostylyov V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. G. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. G. Popov V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • B. M. Romanyuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. V. Chernenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. M. Naseka V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • T. V. Slusar National Aviation University
  • S. I. Kyrylova V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • F. F. Komarov A.N. Sevchenko Institute for Applied Physical Problems, Belarusian State University

DOI:

https://doi.org/10.15407/ujpe58.02.0142

Keywords:

surface photovoltage, surface recombination, silicon

Abstract

Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, the
formation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface.

UJP 2013 V58 #2

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Published

2018-10-05

Issue

Vol. 58 No. 2 (2013)

Section

Solid matter

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How to Cite

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer. (2018). Ukrainian Journal of Physics, 58(2), 142. https://doi.org/10.15407/ujpe58.02.0142

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