Influence of Trap States on the Kinetics of luminescence and Induced Light Absorption by Si Nanoparticles in a SiO2 matrix at their Excitation with Femtosecond Laser Pulses

Authors

  • V. M. Kadan Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • I. Z. Indutnyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. A. Dan’ko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • P. E. Shepelyavyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • I. M. Dmitruk Taras Shevchenko National University of Kyiv
  • P. I. Korenyuk Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • I. V. Blonsky Institute of Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe58.01.0020

Keywords:

trap states, transient absorption, lux-intensive characteristics, fluence, effect of luminescence fatigue, CCD-camera, Auger-process, pump-probe, white supercontinuum, telegraph-like signal

Abstract

We report on the results of our researches dealing with nonlinearities caused by trap states in the lux-intensity characteristics of the intrinsic emission band of Si nanoparticles embedded into a SiO2 matrix and the dependence of the temporal characteristics of induced absorption on the pump femtosecond pulse fluence.

UJP 2013 V58 #1

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Published

2018-10-05

Issue

Vol. 58 No. 1 (2013)

Section

Optics, lasers, and quantum electronics

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How to Cite

Influence of Trap States on the Kinetics of luminescence and Induced Light Absorption by Si Nanoparticles in a SiO2 matrix at their Excitation with Femtosecond Laser Pulses. (2018). Ukrainian Journal of Physics, 58(1), 20. https://doi.org/10.15407/ujpe58.01.0020

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