Uncooled Wide-Range Spectral Optoelectronic Devices on the Base of HgCdTe Semiconductor

Authors

  • F. Sizov V.E. Lashkaryov Institute of Semiconductor Physics

DOI:

https://doi.org/10.15407/ujpe60.02.0114

Keywords:

MCT, IR and sub-THz detectors

Abstract

Issues associated with the development and the exploitation of infrared (IR) and sub-terahertz (THz) radiation detectors based on HgCdTe semiconductor are discussed. It is shown that this mercury cadmium telluride (MCT) semiconductor can be applied to the development of bi-colour detectors operating in the IR and sub-THz spectral ranges.

References

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Published

2019-01-22

Issue

Section

Solid matter

How to Cite

Uncooled Wide-Range Spectral Optoelectronic Devices on the Base of HgCdTe Semiconductor. (2019). Ukrainian Journal of Physics, 60(2), 114. https://doi.org/10.15407/ujpe60.02.0114

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