Theoretical Model for Negative Differential Conductance in 2D Semiconductor Monolayers

Authors

  • V. G. Lytovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A. I. Kurchak V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • M. V. Strikha V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine, Taras Shevchenko National University of Kyiv, Faculty of Radiophysics, Electronics, and Computer Systems

DOI:

https://doi.org/10.15407/ujpe63.6.527

Keywords:

differential conductance, semiconductor monolayers of the MoS2 andWS2 types

Abstract

A simple theoretical model of electron heating in a system with two valleys is applied for the first time to describe 2D semiconductor monolayers of the MoS2 and WS2 types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS2 monolayer. It confirms a possibility to fabricate Gunn diodes of a new generation based on the structures concerned. Such diodes are capable of generating frequencies of an order of 10 GHz and higher, which makes them attractive for many practical applications.

UJP 2018 V63 #6

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Published

2018-07-12

Issue

Vol. 63 No. 6 (2018)

Section

Semiconductors and dielectrics

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How to Cite

Theoretical Model for Negative Differential Conductance in 2D Semiconductor Monolayers. (2018). Ukrainian Journal of Physics, 63(6), 527. https://doi.org/10.15407/ujpe63.6.527

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